Consider an idealized silicon npn bipolar transistor with the properties listed in Table 6Q9-1. Assume
uniform doping in each region. The emitter and base widths are between metallurgical junctions (not
neutral regions). The cross-sectional area is 100 μm × 100 μm. The transistor is biased to operate in
the normal active mode. The base-emitter forward bias voltage is 0.6 V and the reverse bias basecollector
voltage is 18 V.